| PART |
Description |
Maker |
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
| ECN3021 |
High Voltage Monolithic IC
|
Hitachi
|
| ECN3061 ECN3061SPR ECN3061SP ECN3061SPV |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| ECN3063 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN3063 ECN3063SPR ECN3063SPV ECN3063SP |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| TPD4113K07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4105AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LT3512HMSTRPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| IXBH5N160G IXBP5N160G |
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
